|
¸ðµ¨ AcuSR200 Ellipsometer

|
System Specifications:
1.ÃøÁ¤ µÎ²² ¿µ¿ª :: 20 nm to 50 µm
2.ÃøÁ¤½Ã°£: Ãʰí¼Ó 2 ms minimum
3.Accuracy: better than 0.25% (comparing with
ellipsometry
results for Thermal Oxide sample by using
the
same optical constants)
4.1-Sigma Dynamic Precision: 0.2 nm
1-Sigma Long-Term Repeatability: 0.5 n
¹Ú¸·ÀÇ ÁõÂø°øÁ¤Á¦¾î ½Ã½ºÅÛ
Æòźµµ,Çʸ§ StressÃøÁ¤±â
TTV,¸ðÀçµÎ²²,ºñƲ¸²,Æòźµµ,¹Ú¸·ÀÇ ÀÀ·Â,Ç¥¸é¾ç¸é3Â÷¿ø ÃøÁ¤±â 
´Ù¾çÇÑ Å¸ÀÔÀÇ 2,3Â÷¿ø ÃøÁ¤±â 
|
|
Standard System Configuration
- Detector: CCD Array with
2048 pixels
- Light Source: DC regulated
Tungsten-Halogen
- Light Delivery: Fiber Optics
- Effective Wavelength range:
400 to 850 nm
- Beam Size: 1 to 5mm
(Optional down to 5 µm)
- Stage: Black Anodized
Aluminum Alloy
- Communication: USB
- Computer needed: P3 above
- Power: 110– 240 VAC
/50-60Hz, 1.5 A
Options
- Transmission Fixture for
Transmission and Absorption Measurement.
- Micro spot for measuring
small area down to 5 µm size
- Multiple Channel for simultaneously measurement at multiple locations Mapping uniformity over 200 or 300 mm wafer.

|
Features
- Easy to operate with Window
based software
- Advanced optics design for
best system performance
- CCD based array detector
system to ensure fast measurement
- Measure film thickness up to
5 layers
- Allow to acquire reflection,
transmission and absorption spectra in milliseconds
- Capable to be used for real
time or in-line thickness, refractive index monitoring
- Advanced Software allows
user to use either NK table, dispersion or
- effective media
approximation (EMA) for each individual film.
- Upgradeable to MSP
(Microspectrophotometer) system, SRM Mapping system,
- Multiple channel system
- Apply to many different type
of substrates with different thickness
Applications
Photoresist /
polyimide/Oxides/Nitrides
Optical
coatings, TiO2, SiO2, Ta2O5¡¦..
Semiconductor
compounds
Functional films in MEMS/MOEMS
Thin film transistors (TFT)
stack
Conductive oxide: Indium
Tin Oxide
|